A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe/Si HBT foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity and efficiency. At Vcc >4.2 V, the power amplifier shows an excellent linearity (1st ACPR <-44.1 dBc and 2nd ACPR <-57.1 dBc) up to 28 dBm output power for CDMA applications. Biased at the same Vcc, the power amplifier also meets AMPS requirements in maximum output power (31 dBm) and linearity (with 2nd and 3rd harmonic to fundamental ratios lower than -40 dBc and -60 dBc, respectively).
|出版狀態||Published - 1 十二月 1999|
|事件||Proceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999) - Minneapolis, MN, USA|
持續時間: 26 九月 1999 → 28 九月 1999
|Conference||Proceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999)|
|城市||Minneapolis, MN, USA|
|期間||26/09/99 → 28/09/99|