Monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

P. D. Tseng*, L. Y. Zhang, G. B. Gao, Mau-Chung Chang

*Corresponding author for this work

研究成果: Paper

11 引文 斯高帕斯(Scopus)

摘要

A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe/Si HBT foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity and efficiency. At Vcc >4.2 V, the power amplifier shows an excellent linearity (1st ACPR <-44.1 dBc and 2nd ACPR <-57.1 dBc) up to 28 dBm output power for CDMA applications. Biased at the same Vcc, the power amplifier also meets AMPS requirements in maximum output power (31 dBm) and linearity (with 2nd and 3rd harmonic to fundamental ratios lower than -40 dBc and -60 dBc, respectively).

原文English
頁面153-156
頁數4
DOIs
出版狀態Published - 1 十二月 1999
事件Proceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999) - Minneapolis, MN, USA
持續時間: 26 九月 199928 九月 1999

Conference

ConferenceProceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999)
城市Minneapolis, MN, USA
期間26/09/9928/09/99

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    Tseng, P. D., Zhang, L. Y., Gao, G. B., & Chang, M-C. (1999). Monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications. 153-156. 論文發表於 Proceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999), Minneapolis, MN, USA, . https://doi.org/10.1109/BIPOL.1999.803548