Monolithic indium phosphide-based HEMT multioctave distributed amplifier

E. Sovero*, D. Deakin, W. J. Ho, G. D. Robinson, C. W. Farley, J. A. Higgins, Mau-Chung Chang

*Corresponding author for this work

研究成果: Conference article

摘要

The superior performance qualities of indium-phosphide-based high-electron-mobility transistor (HEMT) structures has been established with discrete devices. A report is presented on the first monolithic ICs made with this material system. Results are presented on a monolithic distributed amplifier with greater than 10-dB gain from 2 to 30 GHz. At 14 GHz, the noise figure was 5.2 dB with 14 dB of associated gain. These circuits have all the necessary components for a high-performance amplifier, including quarter-micron EBL (electron beam lithography) defined gates, MIM (metal-insulator-metal) capacitors, air-bridge metal crossovers, and plated-through-substrate vias to the ground plane.

原文English
頁(從 - 到)1085-1087
頁數3
期刊IEEE MTT-S International Microwave Symposium Digest
3
DOIs
出版狀態Published - 1 一月 1990
事件1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA
持續時間: 8 五月 201010 五月 2010

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