Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs

Mansun Chan*, Pin Su, Hui Wan, Chung Hsun Lin, Samuel K.H. Fung, Ali M. Niknejad, Chen-Ming Hu, Ping K. Ko

*Corresponding author for this work

研究成果: Article

24 引文 斯高帕斯(Scopus)

摘要

This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described.

原文English
頁(從 - 到)969-978
頁數10
期刊Solid-State Electronics
48
發行號6
DOIs
出版狀態Published - 1 六月 2004

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