Modeling off-state leakage current of DG-SOI MOSFET's for low-voltage design

Bin Yu*, Tetsu Tanaga, Chen-Ming Hu

*Corresponding author for this work

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

A numerical model has been developed for studying off-state leakage current in double-gate (DG) silicon-on-insulator (SOI) MOSFET devices. The model uses the concept of Center-Surface-Barrier-Difference (CSBD) to determine the effects of doping on the leakage current and examine its most dominant path. Results obtained using the proposed model show good agreement with experimental data.

原文English
頁面15-17
頁數3
出版狀態Published - 1 十二月 1996
事件Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
持續時間: 30 九月 19963 十月 1996

Conference

ConferenceProceedings of the 1996 IEEE International SOI Conference
城市Sanibel Island, FL, USA
期間30/09/963/10/96

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