A numerical model has been developed for studying off-state leakage current in double-gate (DG) silicon-on-insulator (SOI) MOSFET devices. The model uses the concept of Center-Surface-Barrier-Difference (CSBD) to determine the effects of doping on the leakage current and examine its most dominant path. Results obtained using the proposed model show good agreement with experimental data.
|出版狀態||Published - 1 十二月 1996|
|事件||Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA|
持續時間: 30 九月 1996 → 3 十月 1996
|Conference||Proceedings of the 1996 IEEE International SOI Conference|
|城市||Sanibel Island, FL, USA|
|期間||30/09/96 → 3/10/96|