Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

Po Cheng Su, Cheng Min Jiang, Chih Wei Wang, Ta-Hui Wang*

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We characterize SET-state current degradation induced by read operations in a tungsten oxide resistive memory cell. The current degradation exhibits a two-stage evolution. In the second stage, the current decline follows inverse power-law dependence on cumulative read-disturb time. We present an analytical model to derive the inverse power law. Our model includes oxygen ion activation, mobile oxygen ion hopping, and the reduction of oxygen vacancy density by re-oxidation. Voltage and temperature effects on read-disturb-induced degradation are characterized for comparison with the model. Our results show that the power factor in the inverse power law has exponential dependence on a read voltage.

原文English
文章編號8454433
頁(從 - 到)1648-1651
頁數4
期刊IEEE Electron Device Letters
39
發行號11
DOIs
出版狀態Published - 1 十一月 2018

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