Modeling of minibands for Si/Sc quantum dot superlattice solar cells

Yi Chia Tsai, Ming Yi Lee, Yiming Li*, Seiji Samukawa

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cells (SiC-QDSL) with aluminum oxide (A12O3-QDSL) passivation approaches a high short-circuit current (Jsc) of 4.77 mA/cm2 under AMI.5 and one sun illumination due to the quantum enhancement on effective bandgap and minimum transition energy. This value matches well with experimental measurement of 4.75 mA/cm2. To further optimize the conversion efficiency through the geometry of Al2O3-QDSL, we introduce several parameters to define a complete QDSL configuration. A high conversion efficiency of 17.4% is optimized by using the QD geometry from experiment and applying hexagonal QDSL formation with an inter-dot spacing of 0.3 nm.

原文English
主出版物標題Materials for Energy, Efficiency and Sustainability - TechConnect Briefs 2017
編輯Bart Romanowicz, Fiona Case, Matthew Laudon, Fiona Case
發行者TechConnect
頁面41-44
頁數4
ISBN(電子)9780997511796
出版狀態Published - 1 一月 2017
事件11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
持續時間: 14 五月 201717 五月 2017

出版系列

名字Advanced Materials - TechConnect Briefs 2017
2

Conference

Conference11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
國家United States
城市Washington
期間14/05/1717/05/17

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