Modeling of microwave active devices using the FDTD analysis based on the voltage-source approach

Chien-Nan Kuo*, Ruey Beei Wu, Bijan Houshmand, Tatsuo Itoh

*Corresponding author for this work

研究成果: Article

53 引文 斯高帕斯(Scopus)

摘要

This letter describes a voltage-source-based formulation of the extended finite-difference time-domain algorithm for the purpose of modeling microwave devices. The device-wave interaction is fully characterized by replacing the lumped devices with equivalent voltage sources in the device region, which in turn generate electromagnetic fields according to Faraday's law. This formulation is applied to the analysis of a typical microwave amplifier, which includes a three-terminal active MESFET device. Simulation results are in good agreement with measured data.

原文English
頁(從 - 到)199-201
頁數3
期刊IEEE Microwave and Guided Wave Letters
6
發行號5
DOIs
出版狀態Published - 1 五月 1996

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