Modeling and Characterization of Gate Oxide Reliability

Jack C. Lee*, Ih Chin Chen, Chen-Ming Hu, Ih Chin Chen

*Corresponding author for this work

研究成果: Article同行評審

280 引文 斯高帕斯(Scopus)

摘要

In this paper, we present a technique of predicting the lifetime of an oxide for different voltages, different oxide areas, and different temperatures. Using the defect model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. This modeling procedure is applicable to both wafer-level and long-term reliability tests. Process improvements including defect gettering and alternative dielectrics such as chemical-vapor deposited oxides are evaluated in the format of defect density as a function of effective oxide thinning.

原文English
頁(從 - 到)2268-2278
頁數11
期刊IEEE Transactions on Electron Devices
35
發行號12
DOIs
出版狀態Published - 1 一月 1988

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