Model for photoresist-induced charging damage in ultra-thin gate oxides

Horng-Chih Lin*, Chao-Hsin Chien, Meng Feng Wang, Tiao Yuan Huang, Chun Yen Chang

*Corresponding author for this work

研究成果: Paper同行評審

3 引文 斯高帕斯(Scopus)

摘要

The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

原文English
頁面247-250
頁數4
DOIs
出版狀態Published - 1 一月 1997
事件Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA
持續時間: 13 五月 199714 五月 1997

Conference

ConferenceProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
城市Monterey, CA, USA
期間13/05/9714/05/97

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