MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Hao-Chung Kuo*, H. H. Yao, Y. H. Chang, Y. A. Chang, M. Y. Tsai, J. Hsieh, Edward Yi Chang, S. C. Wang

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) 1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.

原文English
頁(從 - 到)538-542
頁數5
期刊Journal of Crystal Growth
272
發行號1-4 SPEC. ISS.
DOIs
出版狀態Published - 10 十二月 2004

指紋 深入研究「MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission」主題。共同形成了獨特的指紋。

引用此