Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate

Zong Lin Li, Yuan Chi Kang, Kuo-Jui Lin*, Chien Ping Lee

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surfaceemitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperaturedependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

原文English
文章編號32
期刊Photonics
5
發行號4
DOIs
出版狀態Published - 1 十二月 2018

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