The excellent RF performance for band-pass and band-stop microwave coplanar filters at 22∼94 GHz on silicon substrates was achieved using an optimized proton implantation process. The implantation process was optimized for better compatibility with VLSI process. The equivalent circuit model was further used to analyze the substrate loss effects of the band pass filter.
|頁（從 - 到）||1909-1912|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 18 八月 2003|
|事件||2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States|
持續時間: 8 六月 2003 → 13 六月 2003