Microwave and thermal characteristics of backside-connected flip-chip power heterojunction bipolar transistors

Pin Fan Chen, R. A. Johnson, Min Chung Ho, Wu Jing Ho, A. Sailer, Mau-Chung Chang, P. M. Asbeck

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Measured and modelled characteristics are reported for a new geometry for contacting AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which provides lower thermal resistance and lower emitter inductance than does the conventional approach. Common-emitter connected HBTs are mounted emitter side down on a metal heatsink. which also serves as electrical ground. Connections to the base and collector are made with substrate vias that extend through the GaAs substrate from the backside of the wafer. This configuration was measured to have values of thermal resistance as small as 0.23 K/mW for a 132μm 2 emitter area HBT, in agreement with simulations. An output power per unit emitter area of 2.9mW/μ 2 : (total power of 370mW) at 9 GHz was observed.

原文English
頁(從 - 到)1931-1932
頁數2
期刊Electronics Letters
32
發行號20
DOIs
出版狀態Published - 1 一月 1996

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