Microstructure examination of copper wafer bonding

Kuan-Neng Chen*, Andy Fan, Rafael Reif

*Corresponding author for this work

研究成果: Article同行評審

59 引文 斯高帕斯(Scopus)

摘要

The microstructure morphologies and oxide distribution of copper bonded wafers were examined by means of transmission electron microscopy (TEM) and energy dispersion spectrometer (EDS). Cu wafers exhibit good bond properties when wafer contact occurs at 400°C/4000 mbar for 30 min, followed by an anneal at 400°C for 30 min in N2 ambient atmosphere. The distribution of different defects showed that the bonded layer became a homogeneous layer under these bonding conditions. The oxidation distribution in the bonded layer is uniform and sparse. Possible bonding mechanisms are discussed.

原文English
頁(從 - 到)331-335
頁數5
期刊Journal of Electronic Materials
30
發行號4
DOIs
出版狀態Published - 1 一月 2001

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