Microstructure and dielectric properties of PZN-PT-BT relaxor ferroelectric ceramics

Xiaoli Wang*, Zhengkui Xu, H. D. Chen

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Paraelectric Ba(Zn1/3Nb2/3)O3 (BZN) is realized as an implicit component in Pb(Zn1/3Nb2/3)O3- PbTiO3-BaTiO3 (PZN-PT-BT), which decreases phase transition temperature and weakens dielectric properties. The dielectric behaviors under high electrical field have been investigated. In the broad temperature range of the diffuse phase transition, PZN-PT-BT ceramics show highly induced polarization. An unusual linear relation of the polarization with electrical field has been observed near the central portion of the hysteresis loops of some samples, which are both temperature and composition dependent. The observed ferroelectric properties may be understood using a model of PZN-based matrix containing ferroelectric PT and paraelectric BZN nano-phase regions.

原文English
頁(從 - 到)15-20
頁數6
期刊Key Engineering Materials
228-229
出版狀態Published - 2 十二月 2002
事件Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
持續時間: 1 十月 20011 十月 2001

指紋 深入研究「Microstructure and dielectric properties of PZN-PT-BT relaxor ferroelectric ceramics」主題。共同形成了獨特的指紋。

引用此