Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO 2 Si at wide range carrier densities

C. C. Liao*, T. C. Ku, M. H. Lin, Lang Zeng, Jinfeng Kang, Xiaoyan Liu, Albert Chin

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

High-performance TaN/TiLaO/La 2 O 3 SiO 2 (111)-Ge nMOSFETs show high mobility of 432 cm 2 Vs at 10 13 cm -2 carrier density (N s ), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO 2 Si universal mobility at wide medium-high N s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO 2 interfacial layer, and YbGe x n-Ge contact.

原文English
文章編號6403496
頁(從 - 到)163-165
頁數3
期刊IEEE Electron Device Letters
34
發行號2
DOIs
出版狀態Published - 10 一月 2013

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