Memory effect of RF sputtered ZrO 2 thin films

Chih Yang Lin, Chung Yi Wu, Chen Yu Wu, Chun Chieh Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

Electrical properties of RF sputtered ZrO 2 memory thin films were investigated in this study. The device with structure Al/ZrO 2 /Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO 2 -based memory with Pt bottom electrode, indicating that the ZrO 2 bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO 2 /Pt device, which might be due to interface reaction between Ti and ZrO 2 film. The resistance value of high conductive state in the Ti/ZrO 2 /Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO 2 /Pt device can be operated over 2000 resistive switching cycles at 85 °C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 85 °C. The write-read-erase-read operations can be over 10 3 cycles at 85 °C. No data loss is found upon successive readout before and after performing 10 3 endurance cycles at 85 °C. According to above experimental results, the ZrO 2 thin film has high potential for nonvolatile memory application.

原文English
頁(從 - 到)444-448
頁數5
期刊Thin Solid Films
516
發行號2-4
DOIs
出版狀態Published - 3 十二月 2007

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