Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Ta-Hui Wang*, Tse En Chang, Lu Ping Chiang, Chimoon Huang, Jyh-Chyurn Guo

*Corresponding author for this work

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

原文English
頁(從 - 到)232-233
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1 一月 1996
事件Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
持續時間: 11 六月 199613 六月 1996

指紋 深入研究「Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's」主題。共同形成了獨特的指紋。

引用此