Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-xTix)O3 ferroelectric memory

Ching Wei Tsai*, Sheng Chih Lai, C. T. Yen, Hao Ming Lien, Hsiang Lan Lung, Tai Bor Wu, Ta-Hui Wang, Rich Liu, Chin Yuan Lu

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr<sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub> ferroelectric memory」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science