Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-xTix)O3 ferroelectric memory

Ching Wei Tsai*, Sheng Chih Lai, C. T. Yen, Hao Ming Lien, Hsiang Lan Lung, Tai Bor Wu, Ta-Hui Wang, Rich Liu, Chin Yuan Lu

*Corresponding author for this work

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Slow-switching effect in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The slow-switching effect becomes worse at lower operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly for low-voltage and high-speed applications. This slow-switching effect is believed to be attributed to slowing down of polarization switching caused by band bending from Schottky built-in potential at the electrode/ferroelectric interface. The proposed mechanism is supported by the polarity dependence in an asymmetric LNO/PZT/Pt sample.

原文English
頁(從 - 到)217-223
頁數7
期刊IEEE Transactions on Device and Materials Reliability
5
發行號2
DOIs
出版狀態Published - 1 六月 2005

指紋 深入研究「Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr<sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub> ferroelectric memory」主題。共同形成了獨特的指紋。

引用此