Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai*, C. W. Tsai, C. T. Yen, C. L. Liu, S. Y. Lee, H. M. Lien, S. L. Lung, Chao-Hsin Chien, T. B. Wu, Ta-Hui Wang, Rich Liu, C. Y. Lu

*Corresponding author for this work

研究成果: Paper同行評審

摘要

Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

原文English
頁面123-126
頁數4
出版狀態Published - 1 十二月 2004
事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
持續時間: 5 七月 20048 七月 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
國家Taiwan
期間5/07/048/07/04

指紋 深入研究「Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory」主題。共同形成了獨特的指紋。

引用此