Mechanical stress induced threshold voltage shifts for nitrided oxide gate m- and p- MOSFETs

H. S. Momose*, T. Morimoto, S. Takagi, K. Yamabe, S. Onga, H. Iwai

*Corresponding author for this work

研究成果: Paper同行評審

3 引文 斯高帕斯(Scopus)

摘要

Short-channel effects on threshold voltage were evaluated in nitrided oxide n- and p- MOSFETs. It was found that some nitrided oxide n-MOSFETs show reduced threshold voltage, compared with that for a very long channel transistor, even when the channel length is 4μm, while such effect was found to be small in the p-MOSFET case. The effect is probably explained by the interface states caused by mechanical stress in the nitrided oxide gate samples.

原文English
頁面279-282
頁數4
出版狀態Published - 1990
事件22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
持續時間: 22 八月 199024 八月 1990

Conference

Conference22nd International Conference on Solid State Devices and Materials
城市Sendai, Jpn
期間22/08/9024/08/90

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