Measuring the edge recombination velocity of monolayer semiconductors

Peida Zhao, Matin Amani, Der Hsien Lien, Geun Ho Ahn, Daisuke Kiriya, James P. Mastandrea, Joel W. Ager, Eli Yablonovitch, Daryl C. Chrzan, Ali Javey

研究成果: Conference contribution同行評審

摘要

Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing these materials for high performance electronic and optoelectronic devices.1-5 WS2 monolayers patterned into disks of varying diameters are used to experimentally determine the influence of edges on their optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τeffective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on non-radiative recombination. The unpassivated WS2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the non-radiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization technique towards experimental explorations of edge passivation methods for 2D materials.

原文English
主出版物標題2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1
頁數1
ISBN(電子)9781538632901
DOIs
出版狀態Published - 28 六月 2017
事件5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Berkeley, United States
持續時間: 19 十月 201720 十月 2017

出版系列

名字2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
2018-January

Conference

Conference5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017
國家United States
城市Berkeley
期間19/10/1720/10/17

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