Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping

H. D. Chen*, G. E. White, S. R. Stock

*Corresponding author for this work

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2 Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2 Si has been determined to be 23 × 10 -6 K -1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

原文English
頁(從 - 到)61-64
頁數4
期刊Materials Letters
4
發行號2
DOIs
出版狀態Published - 1 一月 1986

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