Material characteristics of InGaN based light emitting diodes grown on porous Si substrates

Dongmei Deng, Ching Hsueh Chiu, Hao-Chung Kuo, Peng Chen, Kei May Lau*

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with 2 μm thick crack-free GaN buffer layers were grown on porous Si substrates by metalorganic chemical vapor deposition. The material properties of LEDs grown on porous Si were studied in comparison with LEDs grown on grid-patterned Si. The (101̄5) asymmetric reciprocal space mapping (RSM) results indicate that LEDs grown on porous Si have less lattice tilt or distortion than those grown on grid-patterned Si. Both RSM and micro-photoluminescence (micro-PL) measurements suggest that multiple quantum wells grown on porous Si are less stressed. Mechanisms behind this partial strain relaxation are discussed.

原文English
頁(從 - 到)238-241
頁數4
期刊Journal of Crystal Growth
315
發行號1
DOIs
出版狀態Published - 15 一月 2011

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