Majority Carrier Current Characteristics in Large-Grain Polycrystalline-Silicon-Schottky-Barrier Solar Cells

E. S. Yang, E. K. Poon, C. M. Wu, Wei Hwang, H. C. Card*

*Corresponding author for this work

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

A theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E0. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

原文English
頁(從 - 到)1131-1135
頁數5
期刊IEEE Transactions on Electron Devices
28
發行號10
DOIs
出版狀態Published - 1 一月 1981

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