Magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy

Shun-Tsung Lo, Chiashain Chuang, Sheng-Di Lin*, Kuang Yao Chen, Chi Te Liang, Shih Wei Lin, Jau Yang Wu, Mao Rong Yeh

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

原文English
文章編號102
頁(從 - 到)1-6
頁數6
期刊Nanoscale Research Letters
6
發行號1
DOIs
出版狀態Published - 26 一月 2011

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