Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection

C. C. Liao, Albert Chin, N. C. Su, M. F. Li, S. J. Wang

研究成果: Conference contribution同行評審

18 引文 斯高帕斯(Scopus)

摘要

We report low Vt Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good θm-eff of 5.04 and 4.24 eV, low Vt of -0.16 and 0.13 V, high mobility of 85 and 209 cm2/Vs, and small 85°C BTI ≤40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.

原文English
主出版物標題2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
頁面190-191
頁數2
DOIs
出版狀態Published - 23 九月 2008
事件2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States
持續時間: 17 六月 200819 六月 2008

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
ISSN(列印)0743-1562

Conference

Conference2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
國家United States
城市Honolulu, HI
期間17/06/0819/06/08

指紋 深入研究「Low V<sub>t</sub> gate-first Al/TaN/[Ir<sub>3</sub>Si-HfSi <sub>2-x</sub>]/HfLaON CMOS using simple laser annealing/reflection」主題。共同形成了獨特的指紋。

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