Low temperature processes of organic thin film transistor with gate dielectric of silicon dioxide deposited by scanning atmospheric-pressure technology

Kow-Ming Chang, S. S. Huang, C. H. Lin, S. H. Huang, Y. M. Wu, H. C. Pan, M. I. Hsu

研究成果: Conference contribution同行評審

摘要

We have successfully fabricated pentacene-based organic thin film transistor at a low temperature process with silicon oxide as a gate dielectric deposited by scanning atmospheric-pressure plasma technology (SAPPT). The major merit of scanning atmospheric-pressure plasma technology was low deposition temperature at one standard atmosphere which was suitable for the application of flexible electrons. The organic thin film transistor demonstrated in this study could operate at the voltage less than -5V and the leakage current of silicon oxide dielectric with MIM structure is about 2.5E-8 A/cm27 at 0.5 MV/cm. The low operation voltage and low leakage current properties are required in portable applications.

原文English
主出版物標題ECS Transactions - Organic Semiconductor Materials and Devices
頁面59-65
頁數7
版本25
DOIs
出版狀態Published - 24 十二月 2008
事件Organic Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
持續時間: 7 十月 200712 十月 2007

出版系列

名字ECS Transactions
號碼25
11
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceOrganic Semiconductor Materials and Devices - 212th ECS Meeting
國家United States
城市Washington, DC
期間7/10/0712/10/07

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