Low-temperature epitaxy of GaAs by metalorganic chemical vapor deposition

Wei-Kuo Chen, Chen Shiung Chang, Wen Chun Chen

研究成果: Article

摘要

The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350 °C in a conventional metalorganic chemical vapor deposition system. The full width at half-maxi- mum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425 °C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1 × 10–7 A/cm2, comparable to that of a normal GaAs Schottky diode.

原文English
頁(從 - 到)L1052-L1055
期刊Japanese Journal of Applied Physics
33
發行號8
DOIs
出版狀態Published - 1 一月 1994

指紋 深入研究「Low-temperature epitaxy of GaAs by metalorganic chemical vapor deposition」主題。共同形成了獨特的指紋。

  • 引用此