Low temperature doping of arsenic atoms in silicon during Pd2Si formation

I. Ohdomari*, K. Suguro, M. Akiyama, T. Maeda, King-Ning Tu, I. Kimura, K. Yoneda

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Redistribution of implanted arsenic atoms during Pd2Si formation, the so-called "snowplow effect", was studied by neutron activation analysis and Hall effect and resistivity measurements for determining the arsenic and carrier distribution profiles in silicon. Arsenic atoms in the implanted silicon region were found to be rejected from the newly formed silicide layer and to diffuse into the underlying silicon region at such low temperatures as 250°C. The carrier concentration profiles nicely overlap the arsenic profiles with a maximum activation ratio of 58%. The possibility of a low temperature doping technique using the snowplow effect is suggested.

原文English
頁(從 - 到)349-354
頁數6
期刊Thin Solid Films
89
發行號4
DOIs
出版狀態Published - 26 三月 1982

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