Low-temperature direct CVD oxides to thermal oxide wafer bonding in silicon layer transfer

C. S. Tan*, Kuan-Neng Chen, A. Fan, R. Reif

*Corresponding author for this work

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

The bonding strength of low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition (PECVD) oxides to thermal oxide is studied. Prior to bonding, all CVD oxide wafers are subjected to careful surface preparation including densification, chemical-mechanical polishing, activation, and post-bond annealing to ensure high-quality bonding. All wafers show surface roughness and wafer bow suitable for bonding after the surface preparations. It is found that bonding strength increases upon annealing and saturates beyond 2 h of annealing for the temperature range of 200-300°C. Tetraethyl orthosilicate source PECVD oxide is found to exhibit suitable bonding properties and can be used in applications such as silicon layer transfer.

原文English
期刊Electrochemical and Solid-State Letters
8
發行號1
DOIs
出版狀態Published - 31 一月 2005

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