Low temperature activation of Mg-doped GaN in O2 ambient

Cheng-Huang Kuo*, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jinn Kong Sheu, Chin Hsiang Chen, Gou Chung Chi

*Corresponding author for this work

研究成果: Article同行評審

51 引文 斯高帕斯(Scopus)

摘要

In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
41
發行號2 A
DOIs
出版狀態Published - 1 二月 2002

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