Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions

S. L. Cheng, L. J. Chen*, Bing-Yue Tsui

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Effects of nitrogen-ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF2+-20 keV N2+ and 30 keV As+-20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 1015 cm-2 N2+ and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N+ implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.

原文English
頁(從 - 到)172-175
頁數4
期刊Materials Chemistry and Physics
50
發行號2
DOIs
出版狀態Published - 1 一月 1997

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