Effects of nitrogen-ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF2+-20 keV N2+ and 30 keV As+-20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 1015 cm-2 N2+ and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N+ implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.