Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

Hidetoshi Ishida*, Haruhiko Koizumi, Kazuo Miyatsuji, Hiroshi Takenaka, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy