Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

Hidetoshi Ishida*, Haruhiko Koizumi, Kazuo Miyatsuji, Hiroshi Takenaka, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.

原文English
文章編號5672297
頁(從 - 到)669-672
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
2
DOIs
出版狀態Published - 1 一月 1997
事件Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
持續時間: 8 六月 199713 六月 1997

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