Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology

Fang Ze Hsu, Jau Yang Wu, Sheng-Di Lin*

*Corresponding author for this work

研究成果: Article

12 引文 斯高帕斯(Scopus)

摘要

By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of singlephoton detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications.

原文English
頁(從 - 到)55-57
頁數3
期刊Optics Letters
38
發行號1
DOIs
出版狀態Published - 1 一月 2013

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