Low noise RF MOSFETs on flexible plastic substrates

H. L. Kao*, Albert Chin, B. F. Hung, C. F. Lee, J. M. Lai, S. P. McAlister, G. S. Samudra, Won Jong Yoo, C. C. Chi

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

We report a low minimum noise figure (NF min ) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NF min to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (L g = 80 nm) devices.

原文English
頁(從 - 到)489-491
頁數3
期刊IEEE Electron Device Letters
26
發行號7
DOIs
出版狀態Published - 1 七月 2005

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