Low-noise metamorphic HEMTs with reflowed 0.1-μm T-gate

Y. C. Lien*, Edward Yi Chang, H. C. Chang, L. H. Chu, G. W. Huang, H. M. Lee, C. S. Lee, S. H. Chen, P. T. Shen, C. Y. Chang

*Corresponding author for this work

研究成果: Letter同行評審

30 引文 斯高帕斯(Scopus)

摘要

A 0.1-μm T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 μm and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency fT of 154 GHz and a maximum frequency fmax of 300 GHz. The noise figure for the 160 μm gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 μm MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation.

原文English
頁(從 - 到)348-350
頁數3
期刊IEEE Electron Device Letters
25
發行號6
DOIs
出版狀態Published - 1 六月 2004

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