Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure

Shih Pang Chang*, Kuok Pan Sou, Jet Rung Chang, Yuh Jen Cheng, Yuh Jing Li, Yi Chen Chen, Hao-Chung Kuo, Ta Cheng Hsu, Chun Yen Chang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

We report the efficiency droop behaviors of InGaN/GaN blue LEDs with different thickness of GaN quantum barriers (QBs). The droop percentage from efficiency peak to 70 A/cm 2 is only about 10% as reducing the thickness of GaN QBs from 104 Å to 33 Å. A less carrier localization has been observed from wavelength dependent time resoled photoluminescence measurement as reducing the thickness of GaN QBs. The alleviation of droop percentage may due to more uniform distribution of electron and hole carrier in the active region, which resulted from super-lattice (SL) like active structure. The crystalline quality does not become worse from the results of v-pits density even thickness of GaN QBs is as low as 33 Å. The SL like active structure could be a potential structure to alleviate the efficiency droop for the application of solid state general lighting.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XVI
DOIs
出版狀態Published - 5 三月 2012
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
持續時間: 24 一月 201226 一月 2012

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8278
ISSN(列印)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
國家United States
城市San Francisco, CA
期間24/01/1226/01/12

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