Low Dit high-k/In0.53Ga0.47As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction

D. Hassan Zadeh, H. Oomine, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Low D<sub>it</sub> high-k/In<sub>0.53</sub>Ga<sub>0.47</sub>As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy