Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

H. L. Chen*, Y. F. Chuang, C. C. Lee, C. I. Hsieh, Fu-Hsiang Ko, L. A. Wang

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

原文English
頁(從 - 到)312-318
頁數7
期刊Microelectronic Engineering
67-68
DOIs
出版狀態Published - 1 六月 2003
事件Proceedings of the 28th International Conference on MNE - Lugano, Switzerland
持續時間: 16 九月 200219 九月 2002

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