Localization and electron-electron interactions in few-layer epitaxial graphene

Shun-Tsung Lo, Fan Hung Liu, Chang Shun Hsu, Chiashain Chuang, Lung I. Huang, Yasuhiro Fukuyama, Yanfei Yang, Randolph E. Elmquist, Chi Te Liang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.

原文English
文章編號245201
期刊Nanotechnology
25
發行號24
DOIs
出版狀態Published - 20 六月 2014

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