Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

V. A. Volodin*, V. A. Gritsenko, Albert Chin

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

原文English
頁(從 - 到)424-427
頁數4
期刊Technical Physics Letters
44
發行號5
DOIs
出版狀態Published - 1 五月 2018

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