Linearity characteristics of field-plated AlGaN/GaN HEMTs for microwave application

Jui Chien Huang*, Teng Tung Hsu, Edward Yi Chang, Chung Yu Lu, Chia Ta Chang, Yi Chung Chen, Ting Hung Hsu

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated and characterized for microwave applications. After the implement of the FP structure, lower transconductance (Gm) was observed on DC and small signal characteristics of the GaN power HEMT. Even FP-HEMT showed lower linear gain, the devices still exhibited higher output power and higher power added efficiency than conventional HEMT. However, lower trans-conductance and higher gate-drain capacitance (Cgd) didn't influence the linearity characteristics of the FP-HEMT. Finally, a 100μm GaN power HEMT on sapphire was fabricated with linear gain of 15.39dB, outpout power of 25.36dBm, and power added efficiency of 43%. The device also demonstrated high linearity of -27.1dBc for IMD3 and 33.88dBc for ACPR when biased at drain voltage of 30V with current density of 15mA/mm at 2GHz.

原文English
主出版物標題Student Posters (General) - 215th ECS Meeting
頁面69-75
頁數7
版本23
DOIs
出版狀態Published - 1 十二月 2009
事件General Student Poster Session - 215th ECS Meeting - San Francisco, CA, United States
持續時間: 24 五月 200929 五月 2009

出版系列

名字ECS Transactions
號碼23
19
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceGeneral Student Poster Session - 215th ECS Meeting
國家United States
城市San Francisco, CA
期間24/05/0929/05/09

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