LED materials: Epitaxy and quantum well structures

Zhen Yu Li*, Hao Chung Kuo, Chen Yu Shieh, Ching Hsueh Chiu, Po Min Tu, Wu Yih Uen

*Corresponding author for this work

研究成果: Chapter同行評審

摘要

This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

原文English
主出版物標題Handbook of Advanced Lighting Technology
發行者Springer International Publishing
頁面73-121
頁數49
ISBN(電子)9783319001760
ISBN(列印)9783319001753
DOIs
出版狀態Published - 1 一月 2017

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