Leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption

J. M. Lai*, Wei-Hua Chieng, B. C. Lin, Albert Chin, C. Tsai

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

An intrinsic defect may exist in thin gate oxides. Such a defect can increase the leakage current in a manner similar to stress-induced leakage current. In this paper, we have shown that the effect of this intrinsic defect can be greatly reduced by in situ removal of the native oxide followed by growing a high-quality thermal oxide. By using such in situ cleaning, ultrathin oxides can be prepared with atomically smooth interfaces, good thickness uniformity, and reduced leakage currents.

原文English
頁(從 - 到)2216-2218
頁數3
期刊Journal of the Electrochemical Society
146
發行號6
DOIs
出版狀態Published - 1 六月 1999

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