Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits

Yi-Ming Li*, Chih Hong Hwang, Ta Ching Yeh, Tien Yen Li

*Corresponding author for this work

研究成果: Conference contribution同行評審

14 引文 斯高帕斯(Scopus)

摘要

Modeling of device variability is crucial for the accuracy of timing in circuits and systems, and the stability of high-frequency application. Unfortunately, due to the randomness of dopant position in device, the fluctuation of device gate capacitance is nonlinear and hard to be modeled in current compact models. Therefore, a large-scale statistically sound "atomistic" device/circuit coupled simulation approach is proposed to characterize the random-dopant-induced characteristic fluctuations in 16-nm-gate CMOS integrated circuits concurrently capturing the discrete-dopant-number- and discrete-dopant-position-induced fluctuations. The variations of transition time of digital circuit (inverter, NAND, and NOR gates) and high-frequency characteristic of common-source amplifier are estimated. For the digital circuits, the function-dependent and circuit-topology-dependent characteristic fluctuations resulted from random nature of discrete dopants is for the first time discussed. This study provides an insight into random-dopant- induced intrinsic timing and high-frequency characteristic fluctuations. The accuracy of the simulation technique is confirmed by the use of experimentally calibrated transistor physical model.

原文English
主出版物標題2008 IEEE/ACM International Conference on Computer-Aided Design Digest of Technical Papers, ICCAD 2008
頁面278-285
頁數8
DOIs
出版狀態Published - 2008
事件2008 International Conference on Computer-Aided Design, ICCAD - San Jose, CA, United States
持續時間: 10 十一月 200813 十一月 2008

出版系列

名字IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
ISSN(列印)1092-3152

Conference

Conference2008 International Conference on Computer-Aided Design, ICCAD
國家United States
城市San Jose, CA
期間10/11/0813/11/08

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