The authors investigated the optimal growth conditions for atomic layer deposition of La 2O 3 using tris(iso-propylcyclopentadienyl) lanthanum, La( iPrCp) 3, and H 2O, and identified two necessary conditions for achieving self-limiting growth: A low growth temperature (T s) of 150°C-175°C and an extremely long purging after the H 2O feed. Low T s was also preferable for improving the electrical properties of the metal-oxide-semiconductor devices such as the dielectric constant (k), leakage current, and effective mobility. As for the H 2O feed time, a long feed resulted in increased interface-trap density, while a short feed resulted in increased leakage. An H 2-plasma treatment inserted after the thin-La 2O 3 (0.5 nm) film growth reduced the leakage current by 3 orders of magnitude compared to the control sample. An MgO capping on the La 2O 3 remarkably increased the effective k value; however, it degraded the effective mobility. Transmission electron microscopy indicated that the k-value improvement by the MgO capping is due to suppression of La-silicate formation.
|期刊||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版狀態||Published - 九月 2012|