K-Band Low-Noise Amplifiers Using 0.18 μm CMOS Technology

Kyung Wan Yu*, Yin Lung Lu, Da Chiang Chang, Victor Liang, Mau-Chung Chang

*Corresponding author for this work

研究成果: Article同行評審

88 引文 斯高帕斯(Scopus)

摘要

Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is > +2 dBm for both LNAs with a current consumption of 30 m A from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.

原文English
頁(從 - 到)106-108
頁數3
期刊IEEE Microwave and Wireless Components Letters
14
發行號3
DOIs
出版狀態Published - 1 三月 2004

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